| 摘要 |
1457962 Epitaxial deposition R C A CORPORATION 19 March 1974 [22 March 1973] 12033/74 Heading B1S An epitaxial layer of a single crystal semiconductor material is deposited on a substrate. wherein there is a substantial lattice resinated between the materials of the layer and the substrate, by roughening a surface of the substrate sufficiently to introduce crystalline dislocations or work damage near the surface but not to cause substantial non-uniformity in the general planarity of the surface, plaining the roughened surface of the substrate in contact with a solution of the semiconductor material dissolved in a molten solvent, cooling the solution to deposit some of the semiconductor material from the solution onto the roughened surface of the substrate and separating the substrate with the layer of semiconductor material thereon from the solution. The deposition on a roughened surface is most suitable when the lattice mismatch between the material of the substrate and the semiconiductor material is >0.3%. Pairs of materials which have lattice mismatches of >0.3% and at least one of which can be deposited by liquid phase epitaxy are GaAs/GaP; InGaAs/GaAs; InAsP/InP; AlGaAs/GaP. Substantially smooth and uniform epitaxial layers can be deposited over all the roughened surface of the substrate due to the increased number of nucleation sites to allow growth of the single crystal epitaxial layer. Suitable roughening comprises rubbing with sand paper, sand blasting or lapping with abrasive.
|
