发明名称 |
Fabrication of semiconductor device |
摘要 |
A method for fabricating an indium antimonide semiconductor device which includes anodizing through a portion of the thickness of an indium antimonide substrate containing an active impurity of a first type; selectively ion implanting an active impurity of a second type into the indium antimonide substrate; annealing; providing for ohmic electrical contact between preselected regions of the indium antimonide substrate and subsequently applied electrical contacts; and depositing a plurality of electrical contacts, a predetermined number of which are in ohmic electrical contact with the preselected regions of the substrate to thereby provide the semiconductor device; and semiconductor device obtained thereby.
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申请公布号 |
US4080721(A) |
申请公布日期 |
1978.03.28 |
申请号 |
US19750591996 |
申请日期 |
1975.06.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HUNG, ROLAND Y. |
分类号 |
H01L29/78;H01L21/265;H01L21/316;H01L21/331;H01L21/60;H01L29/20;H01L29/73;(IPC1-7):B01J17/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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