Method of manufacturing a semiconductor device and device manufactured according to the method

摘要

A method of manufacturing a metal silicide pattern with respect to which two electrode zones are to be provided in a self-registering manner. According to the invention the pattern is provided in the form of a layer of polycrystalline silicon and, by selective oxidation and masking, only the upper surface of the pattern is exposed to the silicide formation so that passivation problems and short circuit are avoided. The use of silicides which cannot withstand high temperatures is also possible.