Semiconductor memory device

摘要

The disclosed semiconductor memory device has a multiplicity of memory cells disposed in rows and columns. Each memory cell includes two transistors extending in the thickness direction of the device for storing and interconnected into a flip-flop, two lateral transistors for performing the reading-out and writing-in operations respectively and two lateral transistors for addressing. Each of the lateral transistors includes an L-shaped emitter opposed to the base and collector of the associated thickness direction transistor lengthwise of the semiconductor substrate involved and also in the direction of thickness thereof.