Semiconductor temperature sensitive switching device with short carrier lifetime region

摘要

A semiconductor heat sensitive switching device comprises A FIRST SEMICONDUCTOR LAYER HAVING THE FIRST CONDUCTIVE TYPE; A SECOND SEMICONDUCTOR LAYER HAVING THE SECOND CONDUCTIVE TYPE FOR FORMING THE FIRST EMITTER PN junction which is disposed in the first semiconductor layer to be substantially parallel of one main surface to the bottom surface and to contact them at the end; and A THIRD SEMICONDUCTOR LAYER HAVING THE SECOND CONDUCTIVE TYPE FOR FORMING THE COLLECTOR PN junction which is disposed in the first semiconductor layer with a space to the second semiconductor layer to be substantially parallel of one main surface to the bottom surface and to contact them at the end, and a high thermal carrier generation rate region which is formed in the depletion layer region of the bottom surface of the third semiconductor layer.