| 发明名称 |
FORMING METHOD OF METAL OXIDE FILM OR SEMICONDUCTOR OXIDE FILM |
| 摘要 |
PURPOSE:To make an oxide layer of a specified thickness and a desired shape in an arbitrary depth position by implating oxygen ions then heat-treating the substrate in an inert gas. |
| 申请公布号 |
JPS5331971(A) |
申请公布日期 |
1978.03.25 |
| 申请号 |
JP19760106503 |
申请日期 |
1976.09.06 |
| 申请人 |
NIPPON TELEGRAPH & TELEPHONE |
发明人 |
IZUMI KATSUTOSHI;DOUKEN MASANOBU;ARIYOSHI AKIRA |
| 分类号 |
C23C14/08;C23C14/48;H01L21/265;H01L21/316 |
主分类号 |
C23C14/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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