| 发明名称 |
COMPOSITE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME |
| 摘要 |
A planar transistor has its base-collector-pn-junction bridged with a Schottky diode, wherein the degree of coupling of the Schottky diode is modified by means of a semiconducting layer with non-homogenous doping. |
| 申请公布号 |
JPS5331976(A) |
申请公布日期 |
1978.03.25 |
| 申请号 |
JP19770105763 |
申请日期 |
1977.09.02 |
| 申请人 |
SIEMENS AG |
发明人 |
GERARUTO MIYUNDERU |
| 分类号 |
H01L27/06;H01L21/331;H01L21/822;H01L21/8222;H01L27/04;H01L27/07;H01L29/47;H01L29/73;H01L29/872 |
主分类号 |
H01L27/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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