| 摘要 |
1504484 Semiconductor devices TOKYO SHIBAURA ELECTRIC CO Ltd 6 Aug 1976 [13 Aug 1975 (4)] 32879/76 Heading H1K A semiconductor device has a first protective silicon oxide layer 27 and a second protective P 2 O 5 - and B 2 O 3 -containing silicon oxide layer 28. The concentrations of the P 2 O 5 and B 2 O 3 being such that the melting point of the second layer 28 is below 1200‹ C., the ratio between the etching rates of the first and second insulating layers 27, 28 in NH 4 F is between 0À5 and 2À0, and the polarizability of the second insulating layer 28 is below 0À3. The second layer 28 is heated to a temperature below 1200‹ C. to round off its edges before or after electrode connections 29-32 are provided through the two insulating layers 27, 28. |
