MONOLITHIC COMPOUND SEMICONDUCTOR ARRANGEMENTS

摘要

1504636 Semiconductor devices SIEMENS AG 9 July 1975 [8 Aug 1974] 28824/75 Heading H1K Highly doped zones 8 of a conductivity type the same as that of a silicon substrate 1 are provided below a silicon oxide layer pattern 9 formed in etched recesses (6), Fig. 1 (not shown), by ion-implantation using an ion beam, e.g. of boron, directed substantially normally to the floor of the recess (6), a silicon nitride etching mask 5 also serving as a doping mask during the said ion implantation, and subsequently acting as an oxidizing mask during the oxidation of exposed silicon in the recess (6) formed in a surface zone 4 of a conductivity type different from that of the substrate 1, the oxide layer pattern 9 sub-dividing the surface zone into islands which are doped using an ion beam which penetrates the silicon nitride mask thereby forming a respective semiconductor element, e.g. a diode and a transistor in them. Prior to the epitaxial deposition of the surface zone 4, highly doped zones 2, 3 of a conductivity type different from that of the substrate 1 are provided in the surface region of the substrate. p-conducting zones 10, 11 are produced by boron implantation through the mask 5, and subsequently two p+-conducting contacting zones 12, 14 are formed by boron diffusion in the presence of oxygen, through windows chemically etched in the mask 5. An emitter zone is then provided by implanting arsenic or phosphorus, the mask 5 and SiO 2 layers which fill the windows above the zones 12, 14 acting as a barrier against the donors. The surface zone 4, which may be n-conducting, is epitaxially shown and the silicon nitride mask 5 is pyrolitically deposited from gas at about 800‹ C. The recesses 6 are formed by using an HF-H 2 O 2 mixture or an HF-HNO 3 mixture diluted with deionized water. Preferably, the specific resistance of the p-conducting silicon substrate 1 is not less than 5 ohm-cms, the thickness of Si 3 N 4 layer is about 1500 Š and the thickness of SiO 2 -layer in the recesses (6) is at least 1À5 Á. Reference has been directed by the Comptroller to Specification 1,363,515.