发明名称 |
Method of preparing a dielectric-isolated substrate for semiconductor integrated circuitries |
摘要 |
In the preparation of a dielectric-isolated substrate for semiconductor integrated circuits which comprises a plurality of silicon single crystalline islands in which circuit elements are formed, a region made of an alternate laminate of silicon polycrystalline layers and silicon oxide films for supporting the plurality of silicon single crystalline islands, and a silicon oxide film interposed between the silicon single crystalline islands and the support region for isolating each of the silicon single crystalline islands from the remaining ones and the support region, the formation of three to twelve silicon polycrystalline layers in the support region can remarkably reduce the bending of the substrate resulting from the growth stress of the silicon polycrystalline layers or from the difference in thermal expansion coefficients between the single crystalline silicon and the polycrystalline silicon, and therefore produces a dielectric-isolated substrate showing little bending.
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申请公布号 |
US4079506(A) |
申请公布日期 |
1978.03.21 |
申请号 |
US19750637959 |
申请日期 |
1975.12.05 |
申请人 |
HITACHI, LTD. |
发明人 |
SUZUKI, TAKAYA;YAGYUU, SETUROO;MIMURA, AKIO |
分类号 |
H01L21/3205;H01L21/762;H01L23/52;(IPC1-7):H01L21/30;H01L21/31 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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