Reverse switching rectifier and method for making same

摘要

A reverse switching rectifier is described in which a PNPN semiconductor structure has a specially adapted N-type end zone or cathode-emitter zone. The N-type end zone penetrates to two different levels in the semiconductor body. A deep central portion and a shallow peripheral portion of the N-type end zone are produced by etching a cavity in the center of the body followed by diffusion of N-type dopant material. The exposed surfaces of the N-type end zone are then metallized to provide electrical and thermal contact thereto.