| 发明名称 |
METHOD FOR SURFACE TREATMENT OF SEMICONDUCTER ALLOY |
| 摘要 |
PURPOSE:To finish a semiconductor crystal surface to become a kind of mirror face by a method wherein the crystal surface is soaked in heated caustic potash solution to remove the surface film' adhered during aqua regia process. CONSTITUTION:A crystal substrate consisting of lead, sulpher and selenium is soaked in activated aqua regia, then immediately is soaked in caustic potash solution heated at 40 deg.C. A thin film covering the substrate is removed by stirring the solution for one or two minutes. Finally the crystal substrate with a lustrous mirror surface appeared is washed through flowing water to remove the caustic potash solution. |
| 申请公布号 |
JPS55145343(A) |
申请公布日期 |
1980.11.12 |
| 申请号 |
JP19790052791 |
申请日期 |
1979.04.27 |
| 申请人 |
FUJITSU LTD |
发明人 |
YOSHIKAWA MITSUO;SHINOHARA KOUJI;ITOU MICHIHARU;FUKUDA HIROKAZU |
| 分类号 |
H01L21/308;H01L21/306;(IPC1-7):01L21/306 |
主分类号 |
H01L21/308 |
| 代理机构 |
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代理人 |
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