| 摘要 |
PURPOSE:To reduce the capacity between a drain and a substrate of an insulated gate field effect transistor by reacting an insulator ion ion implanted with silicon to form an insulating buried layer only under the source and the drain regions. CONSTITUTION:Oxygen or nitrogen ion is implanted over a mask 6 to remove the mask 6 so as to anneal the substrate. As a result, insulating buried regions 7A, 7B are formed. Then, with polysilicon gate electrode 5 as a mask boron ion is implanted to form a p<+>-type source 8A and a p<+>-type drain 8B on the regions 7A, 7B, respectively. Then, an SiO2 film 4 on the source and drain is opened to wire aluminum therethrough. |
