| 摘要 |
PURPOSE:To form a smoothly oblique sidewall of a contact window of an interlayer insulating film by employing a photomask having a translucent part on the outer periphery of an opening when the resist pattern of the window is formed. CONSTITUTION:A gate insulating film 2 and a gate electrode 3 are formed on an Si substrate 1, and an impurity diffused layer 4 is formed. Then, an interlayer insulating film 5 used also for flattening is formed on the electrode 3 and the substrate 1. A resist pattern 9 of a contact window is formed on the film 5 by using a photomask 7 for a contact window patterning with a translucent part 6 on the outer periphery of an opening. Then, the window 10 is formed at the film 5 by anisotropic dry etching, and wiring electrodes 11 are formed. Thus, since a resist is etched by dry etching, the oblique wall of the window 10 of the film 5 is formed in a shape having a smooth incline. |
