发明名称 Gate control apparatus
摘要 In a semiconductor device which includes a main thyristor and an auxiliary thyristor for turning off the main thyristor and controls conduction period of the main thyristor according to a given duty factor, a gate control apparatus comprising a phase shifter for producing a square wave output corresponding to the duty factor, an integrator for integrating the output of the phase shifter, a relay circuit having two level settings and receiving the output from the integrator to produce an output which exhibits a hysterisis characteristic corresponding to the two level settings, and an amplifier for turning on the main thyristor in response to the output from the relay circuit and turning on the auxiliary thyristor upon the termination of the output from the relay circuit.
申请公布号 US4079270(A) 申请公布日期 1978.03.14
申请号 US19760681248 申请日期 1976.04.28
申请人 HITACHI, LTD. 发明人 IBAMOTO, MASAHIKO;SUZUKI, MASATO;KURIYAMA, SIGERU
分类号 G05F1/10;H02M1/06;H02M1/08;H02M3/137;(IPC1-7):H03K17/60 主分类号 G05F1/10
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