发明名称 |
Stacked transistor output amplifier |
摘要 |
In transistor output stages, where the applied voltage exceeds the voltage rating of available transistors, stacking is employed to divide the voltage across two or more series connected devices. A complementary emitter follower transistor is employed in the biasing of the stacking transistor along with a current source acting as the emitter follower load. This arrangement provides constant current drive for the stacking transistor without resorting to low value biasing resistors which produce excessive current flow under quiescent conditions.
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申请公布号 |
US4079336(A) |
申请公布日期 |
1978.03.14 |
申请号 |
US19760753025 |
申请日期 |
1976.12.22 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
GROSS, WILLIAM HARLOS |
分类号 |
H03F3/42;H03F3/50;(IPC1-7):H03F3/04 |
主分类号 |
H03F3/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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