发明名称 |
PROCESS FOR INTERCONNECTING TWO CROSSED CONDUCTING METAL LINES DEPOSITED ON A SUBSTRATE |
摘要 |
A double level metal interconnection structure and process for making same are disclosed, wherein an etch-stop layer is formed on the first metal layer to prevent over-etching thereof when forming the second level metal line in a via hole in an insulating layer thereover, by means of reactive plasma etching. The etch-stop layer is composed of chromium and the reactive plasma etching is carried out with a halocarbon gas. |
申请公布号 |
DE2861415(D1) |
申请公布日期 |
1982.01.28 |
申请号 |
DE19782861415 |
申请日期 |
1978.10.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ALCORN, GEORGE EDWARD;HAMAKER, RAYMOND WEAVER;STEPHENS, GEOFFREY BROWNELL |
分类号 |
H01L21/28;H01L21/3213;H01L21/768;H01L23/522;(IPC1-7):01L21/60;01L21/88;05K3/46 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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