| 摘要 |
PURPOSE:By using a mask consisting of materials which are easy to generate a hydioxide, a metallic thin film or a metallic compound thin film is etched by inert ions in an atmosphere of O2 and H2, and therefore, the etching speed ratio between the metallic film and the mask is made larger, so that a sharp microscopic pattern can be obtained which reaches the deep part of the metallic film. |
