Heterojunction diode laser with self-compensating zone - of aluminium nitride made P:conducting by rearrangement

摘要

Hetero-junction diode laser has zone(s) of n-conducting GaN and zone(s) of a self-compensating semiconductor contg. AIN, which is made p-conducting by rearrangement of the atomic structure. The structure allows p-conduction instead of the usual n-conduction in self-compensating cpds. semiconductors. The device has 2 AIN zones, each forming a pn-junction with the third zone of GaN or 2 adjacent n-conducting zones one of AIN and the other of GaN or Ga1.xAlxN and a self-compensating zone of AIN.