发明名称 |
High speed dry etching method. |
摘要 |
<p>A high speed dry etching method using a magnetron discharge is provided in which a reactive gas whose molecules contain at least fluorine atom and hydrogen atom, such as CHF3, is introduced and ionized by the magnetron discharge. A sample, for exmaple, a silicon wafer covered with a silicon dioxide film, is subjected to the ionized gas in order to be etched.</p> |
申请公布号 |
EP0065277(A1) |
申请公布日期 |
1982.11.24 |
申请号 |
EP19820104146 |
申请日期 |
1982.05.12 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
OKANO, HARUO;HORIIKE, YASUHIRO |
分类号 |
H01J37/34;H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):01L21/203;01J37/00 |
主分类号 |
H01J37/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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