Method of manufacturing charge transfer device

摘要

The invention relates to a charge transfer device (C.T.D.) with polycrystalline silicon electrodes which are provided on a nitride layer. The nitride layer has apertures between the polyelectrodes. Electrodes of a second metallization layer, for example, of aluminium, are provided via said apertures. The charge storage capacities per surface unit (and with equal voltages) can be made equal by subjecting the device for a short period of time to an oxidation treatment prior to providing the Al electrodes so that the oxide layer in the apertures can become thicker than below the Si electrodes.