Apparatus for use in examining the lattice of a semiconductor wafer by X-ray diffraction

摘要

An improved apparatus for examining the crystal lattice of a semiconductor wafer utilizing x-ray diffraction techniques. The apparatus is employed in a method which includes the step of recording the image of a wafer supported in a bent configuration conforming to a compound curve, produced through the use of a vaccum chuck provided for an x-ray camera while the entire surface thereof is illuminated simultaneously by a beam of incident x-rays which are projected from a distant point-source and satisfy conditions of the Bragg Law for all points on the surface of the wafer.