| 发明名称 |
ELECTRODE STRUCTU RE OF SEMICONDUCTOR ELEMENT |
| 摘要 |
<p>PURPOSE:To obtain electrodes of high reliability suitable for super-high frequency transistor elements by incorporating aluminum oxide such as aluminium oxidechromium-titanium-platinum-gold to an electrode structure.</p> |
| 申请公布号 |
JPS5323567(A) |
申请公布日期 |
1978.03.04 |
| 申请号 |
JP19760097900 |
申请日期 |
1976.08.17 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
NAKAMURA NOBUAKI |
| 分类号 |
H01L21/60;H01L21/28;H01L21/283;H01L21/31;H01L29/43 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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