| 摘要 |
PURPOSE:To obtain a transistor having excellent characteristics by implanting a second conduction type impurity to the surface of a first conduction type semiconductor substrate before forming a predetermined mask and previously increasing the resistance value of the surface when a second conduction type well region is diffused and formed to the substrate as a drain region by using the mask, a first conduction type source region is shaped into the well region, a gate electrode is attached and the vertical type MOS transistor is manufactured. CONSTITUTION:An N<-> type layer 22 as a drain region is grown on an N<+> type Si substrate 21 in an epitaxial manner and coated with a gate oxide film 23, and B ions are implanted to the whole surface through the film 23 to previously increase the resistance value of the surface of the layer 22 up to a predetermined value. A gate electrode 24 consisting of polycrystalline Si is formed at the central section of the surface of the film 23, and P type well regions 25 are diffused and shaped in the layer 22 on both sides of the gate electrode while using the gate electrode as a mask. N<+> type source regions 26 holding P<+> type contact regions 27 are formed to the regions 25 in a normal manner, and a transistor, dielectric resistance thereof is low, which has low threshold voltage and in which a punch-through and a short channel effect are not generated, is obtained.
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