发明名称 DRY-ETCHING APPARATUS
摘要 PURPOSE:To improve the throughput and reduce the contamination of a processing chamber due to dust by a method wherein a high vacuum chamber, always highly evacuated, is provided and the processing chamber, transfer preparation chambers and the high vacuum chamber are connected through valves. CONSTITUTION:This apparatus is composed of three vacuum chambers, i.e. a processing chamber 1, a carrying-in preparation chamber 2 and a carrying-out preparation chamber 3. The processing chamber 1 and the preparation chambers 2, 3 are connected to a large capacity high vacuum chamber 7 by pipings through valves 9-11. When an etching is performed, a specimen is put into the preparation chamber 2 and after each chamber is evacuated to a high vacuum, the specimen is transferred into the processing chamber 1 and a gas is introduced into the processing chamber 1 and the specimen is etched. After the etching is finished, the processing chamber 1 is evacuated to a high vacuum and then the specimen is transferred to the preparation chamber 3. With this constitution, the processing chamber 1 and the preparation chambers 2, 3 can be highly evacuated in a short time so that a throughput can be improved. By making the exhaust air flow from the processing chamber 1 to preparation chambers 2, 3, the contamination by dust can be avoided.
申请公布号 JPS59231816(A) 申请公布日期 1984.12.26
申请号 JP19830105811 申请日期 1983.06.15
申请人 HITACHI SEISAKUSHO KK 发明人 KATOU SHIGEKAZU;FUJISAWA TAKAHIRO
分类号 H01L21/302;H01J37/18;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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