| 发明名称 |
CHARGE TRANSFER EL EMENT |
| 摘要 |
<p>PURPOSE:By varying the insulation film thickness under the given electrode or by providing a high impurity concentration layer thereunder to change the depth of potential well fixedly, charge transfer elements capable of fixed memory are to be made.</p> |
| 申请公布号 |
JPS5323281(A) |
申请公布日期 |
1978.03.03 |
| 申请号 |
JP19760097022 |
申请日期 |
1976.08.16 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
KUBOTA NOBUHISA;KAYAMA SUSUMU |
| 分类号 |
G11C17/00;G11C11/35;G11C19/28;G11C27/04;H01L21/339;H01L29/10;H01L29/423;H01L29/762;H01L29/768 |
主分类号 |
G11C17/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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