| 摘要 |
PURPOSE:To prevent leakage current of the photo absorption layers due to an optically pumped minority carrier by a method wherein layers, which perform photo absorption, and layers, which perform current constriction, are separated from each other. CONSTITUTION:An n type semiconductor layer 2; a semiconductor layer 3 having a smaller forbidden band width than that of the layer 2; a p type semiconductor layer 4 having a larger forbidden band width than that of the layer 3; semiconductor layers 8-10, each having a striped groove; and a p type semiconductor layer 6 having a larger forbidden band width than that of the layer 3 are provided on an n type substrate 1. The layer 8 is a p type layer and has a smaller forbidden band width than that of the layer 3. The layer 9 has a p type and the layer 10 has an n type. The layers 9 and 10 have a larger forbidden band width than that of the layer 3. The layer 3 and the layer 8 substantially absorb respectively lights, which are emitted from the laser active layers and the active layers, and both make a control of transverse mode performance. As a result, leakage currnent of the photo absorption layers can be prevented by a p-n junction, which is formed by the layers 9 and 10. |
