| 摘要 |
PURPOSE:To obtain uniaxial-mode oscillation, which is lower in oscillation threshold value current and can be easily manufactured, by a method wherein a mesa part has a p-n junction and a semiconductor layer having a smaller width than the mesa width is provided at the mesa part. CONSTITUTION:An n type Al0.4Ga0.6As layer 2; an n type Al0.3Ga0.7As layer 3; an Al0.12Ga0.88As layer 4, which is used as an active layer; a p type Al0.6 Ga0.4As layer 5; a p type Al0.4Ga0.6As layer 6; and a p type GaAs layer 7 are successively formed on an n type GaAs substrate 1. A mesa etching is performed up to reach the substrate 1 using chemical etching solution and a mesa part having an active region is formed. Then, when an etching is lightly performed while the etching solution is stired, the layer 5 only is etched and a neck 8 made narrower than the mesa width is formed. As a result, it can be easily attained to stop current, which leaks from parts other than the mesa region. |
