VERFAHREN ZUM SELEKTIVEN DOTIEREN EINES HALBLEITERKOERPERS

摘要

A method of selectively doping a semiconductor body with aluminum impurities comprises the step of forming a layer of silicon dioxide which is thick enough so that during the diffusion a masking portion of aluminum oxide is formed therein. The aluminum oxide formed serves as a mask against the penetration of aluminum impurities through the remaining silicon dioxide therebelow.