发明名称 |
Integrated circuit module - produced by glass film bonding one substrate for silicon island domains to another as carrier |
摘要 |
<p>A semiconductor substrate for integrated circuits is produced by mfg. 2 monocrystalline semiconductor wafers and by forming insulating grooves in the desired pattern on the first, and covering its whole surface by a dielectric insulating layer. A bonding layer is applied over this or over a silicon dioxide coated major surface of the second water and both wafers are firmly joined together. The first wafer is finally polished or etched away from its rear face to the bottom of the grooves. This creates many monocrystalline island of even thickness in the substrate and results in a better integration density. The penetration of other than the preselected impurities into the island domains is prevented, resulting in excellent electrical properties of the modules.</p> |
申请公布号 |
DE2738614(A1) |
申请公布日期 |
1978.03.02 |
申请号 |
DE19772738614 |
申请日期 |
1977.08.26 |
申请人 |
HITACHI,LTD. |
发明人 |
OGIHARA,SATORU;SUZUKI,TAKAYA;KAMEI,TATSUYA;OGAWA,TAKUZO |
分类号 |
H01L21/316;H01L21/762;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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