| 摘要 |
1534160 Substrates for epitaxial deposition SWISS ALUMINIUM Ltd 4 Nov 1976 [7 Nov 1975] 45838/76 Heading B1S Wafers of single crystal, material for use as substrates for epitaxial layers are subjected to an annealing treatment of 500- 1600‹C to remove concentrations of atomic point defects and then polished. The substrate may be Gd 3 Ga 5 O 12 , Sm 2 Ga 5 O 12 , Al 2 O 3 or MgAl 2 O 4 . The heat treatment may be carried out after lapping but before polishing and may last for 2-48 hours. |
