| 摘要 |
PURPOSE:To use a single crystal substrate, which has large diameter and cost thereof is low, and to improve mass productivity by employing a group IV single crystal substrate such as Si or Ge, growing a ZnS growth layer through a MOCVD method, adding Al and obtaining an N-type ZnS film having low resistance. CONSTITUTION:An N-type Si wafer is used as a substrate 11. N-type ZnS films having low resistance are grown through a MOCVD method. That is, the high-resistance ZnS layer 12 and the low-resistance ZnS layer 13 on the interface with the substrate 11 are grown. When growing the ZnS films, an organic metal of Zn and H2S gas are employed. An organic metal of Al is used as a dopant. The temperature of the substrate is set at approximately 400 deg.C, and these metals and gas are flowed onto the Si single crystal substrate on an SiC susceptor heated by high frequency or an electric furnace while precisely controlling the flow rates of each component gas. An In-Ga ohmic electrode 14 is shaped partially onto the ZnS film 13, and an insulating layer 15 and a Schottky electrode 16 onto the insulating layer 15 are formed. Consequently, the single crystal substrate, which has a large diameter and cost thereof is low, can be used, thus improving mass productivity. The lattice constants of the substrate and the grown layer on the substrate are easy to be aligned, thus resulting in the difficulty of peeling, etc. between both of the substrate and the growth layer. |
