| 摘要 |
PURPOSE:To enable a micropattern good in resolution to be formed by lowering the solubility of a resist. CONSTITUTION:The resist is prepared by adding a small amt. of cross-linking agent having a sensitivity to a far UV ray in the range of 150-300nm wavelength to a positive type resist conventionally used having sensitivity to near UV rays in the range of 300-450nm wavelength. After the substrate to be processed is coated with this resist, it is uniformly irradiated with far UV rays sufficient in relative intensity prior to patternwise exposure to ordinary near UV rays to cross-link the resist. Since the solubility of the resist is reduced, and at the time of development the solubility of the unexposed parts is reduced, the film remaining proportion at the unexposed parts can be raised up to 100%. The exposed parts are also restrained in solubility, it is not dissolved by exposure with ordinary energy level, thus permitting the weakly exposed part with the diffracted light between the exposed part and the unexposed part not to be dissolved. |
