METHOD OF CHEMICAL-VAPOR DEPOSITION ON SEMICONDUCTOR SUBSTRATES

摘要

The present invention relates to an improvement in the conventional method of forming silicon dioxide films by a chemical-vapor deposition reaction of a mixture of an oxidizing agent and SiHnCl(4-n), where n is an integer of from 0 to 4. Such conventional methods which are conducted at temperatures of at least 700 DEG C provide silicon dioxide films on silicon substrates which are substantially free of mobile ion contamination as evidenced by insignificant flat-band voltage shift when subjected to standard bias-temperature test conditions; such insignificant flat-band voltage shifts are indicative of a maximum increase of 1 x 1011 charges/cm2 in the flat-band surface charge resulting from such bias-temperature conditions.