发明名称 |
Charge transfer type solid-state imaging device |
摘要 |
A charge transfer type solid-state device incorporating a charge coupled device (CCD). In order to eliminate field after image and smear, at least two electrode pairs are provided in a vertical CCD shift register for transferring the signal charges stored in photoelectric conversion elements, the electrode pairs being disposed within the vertical pitch of the photoelectric conversion elements.
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申请公布号 |
US4689687(A) |
申请公布日期 |
1987.08.25 |
申请号 |
US19850796752 |
申请日期 |
1985.11.12 |
申请人 |
HITACHI, LTD. |
发明人 |
KOIKE, NORIO;NAKAI, MASAAKI;ANDO, HARUHISA;OZAKI, TOSHIFUMI;OHBA, SHINYA;ONO, HIDEYUKI;AKIYAMA, TOSHIYUKI |
分类号 |
H01L27/148;H04N5/217;H04N5/359;H04N5/3728;(IPC1-7):H04N3/14 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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