发明名称 Charge transfer type solid-state imaging device
摘要 A charge transfer type solid-state device incorporating a charge coupled device (CCD). In order to eliminate field after image and smear, at least two electrode pairs are provided in a vertical CCD shift register for transferring the signal charges stored in photoelectric conversion elements, the electrode pairs being disposed within the vertical pitch of the photoelectric conversion elements.
申请公布号 US4689687(A) 申请公布日期 1987.08.25
申请号 US19850796752 申请日期 1985.11.12
申请人 HITACHI, LTD. 发明人 KOIKE, NORIO;NAKAI, MASAAKI;ANDO, HARUHISA;OZAKI, TOSHIFUMI;OHBA, SHINYA;ONO, HIDEYUKI;AKIYAMA, TOSHIYUKI
分类号 H01L27/148;H04N5/217;H04N5/359;H04N5/3728;(IPC1-7):H04N3/14 主分类号 H01L27/148
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