发明名称 |
ELECTRODE OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To obtain positive connection free from peeling by using Al for the electrodes to be formed on the insulation layer of polyimide at the time when said layer is provided on Al wiring.
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申请公布号 |
JPS5320764(A) |
申请公布日期 |
1978.02.25 |
申请号 |
JP19760094800 |
申请日期 |
1976.08.11 |
申请人 |
HITACHI LTD |
发明人 |
INOUE KOUICHI;YASUDA TOMIROU;SOGA TASAO;FUNAO MASAO |
分类号 |
H01L21/60;H01L21/28;H01L21/283;H01L21/31;H01L29/43 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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