发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 Negative resist compositions are based on carbonaceous polymers with substituent branches containing epoxy groupings. Exemplary materials which include, for example, a copolymer of glycidyl methacrylate and ethyl acrylate in which epoxy groupings are unesterified show high sensitivity, for example, to electron radiation and to X-rays. Resolution is sufficient to permit expedient fabrication of detailed resist patterns for integrated circuits. High adherence permits use of acid or base reagents and thermal stability permits use of ion milling for circuit fabrication.
申请公布号 JPS5320771(A) 申请公布日期 1978.02.25
申请号 JP19770093469 申请日期 1977.08.05
申请人 WESTERN ELECTRIC CO 发明人 YUUJIEN DEIBUITSUDO FUEITO;RARII FURATSUKU TONPUSON
分类号 G03F7/038;G03F7/039;H01L21/027 主分类号 G03F7/038
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