发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interracial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film.</p> |
申请公布号 |
CA1232051(A) |
申请公布日期 |
1988.01.26 |
申请号 |
CA19830443019 |
申请日期 |
1983.12.12 |
申请人 |
HITACHI, LTD. |
发明人 |
YAMAMOTO, HIDEAKI;SEKI, KOICHI;TANAKA, TOSHIHIRO;SASANO, AKIRA;TSUKADA, TOSHIHISA;SHIMOMOTO, YASUHARU;NAKANO, TOSHIO;KANAMORI, HIDETO |
分类号 |
H01L31/10;H01L27/14;H01L31/0216;H01L31/0224;H01L31/04;H01L31/18;H01L31/20;(IPC1-7):H01L31/04 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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