发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interracial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film.</p>
申请公布号 CA1232051(A) 申请公布日期 1988.01.26
申请号 CA19830443019 申请日期 1983.12.12
申请人 HITACHI, LTD. 发明人 YAMAMOTO, HIDEAKI;SEKI, KOICHI;TANAKA, TOSHIHIRO;SASANO, AKIRA;TSUKADA, TOSHIHISA;SHIMOMOTO, YASUHARU;NAKANO, TOSHIO;KANAMORI, HIDETO
分类号 H01L31/10;H01L27/14;H01L31/0216;H01L31/0224;H01L31/04;H01L31/18;H01L31/20;(IPC1-7):H01L31/04 主分类号 H01L31/10
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