| 摘要 |
PURPOSE:To spatially separate electrons from holes steadily for the suppression of their recombination by a method wherein depression in an energy band is made deeper on the side of incidence of light, rich in carriers, and shallower in the other side, not rich in carriers, located remote from the side of incidence. CONSTITUTION:On a transparent electrode 2 on a substrate 1, a p-type semiconductor layer 3, super-lattice lamination 4, i-type amorphous semiconductor layer 8, n-type amorphous semiconductor layer 9, and a rear-side electrode 10 are formed, in that order. The super-lattice lamination 4 is so doped that the quantity doped is less at locations farther from the side of incidence of light. With the lamination being designed as such, depression in an energy band is deeper on the side of incidence crowded with many carriers and is shallower at locations farther from the side of incidence, which ensures a steady spatial separation between electrons and holes. Further, with a proper migratory performance being available, their recombination may be suppressed. |
