| 摘要 |
PURPOSE:To check occurrence of foaming and speed up control of reaction speed by performing etching treatment while controlling the vessel internal pressure inside a pressure vessel. CONSTITUTION:Semiconductor wafers 3 housed in a wafer carrier 30 are dipped in an etching liquid 2 filled in a pressure vessel 1 and a pressure lid 4 is closed. A valve 7 between the piping 8 connected to a pressure bomb and the pressure vessel 1 is opened to introduce pressure gas from the bomb into the pressure vessel 1 to press the inside of the pressure vessel 1. The pressure is monitored by a pressure gauge 6 for being sent to a controller 9. The controller 9 controls a reducing valve 5 between the piping 10 connected to the pressure valve 7 together with an exhaust duct and the pressure vessel 1 in order to hold the inside of the pressure vessel 1 at desired pressure. The semiconductor wafers 3 are given etching treatment having an etching pattern as a mask in an etching liquid 2 for prescribed hours to be pulled up from the etching liquid 2 in order to undergo washing treatment in the other vessel. Thereby, a phenomen to disturb material movement due to foams at fine holes to be etched can be prevented.
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