| 摘要 |
PURPOSE:To obtain a transistor of a low base resistance and high common emitter current amplification factor at a low cost by forming the base section of a silicon bipolar transistor by alternately stacking a plurality of layers of silicon thin films and semiconductor thin films which have a band gap smaller than silicon. CONSTITUTION:In the structure of a silicon bipolar transistor, silicon thin films 3a and germanium thin films 3b are alternately stacked in 10 layers thereby to form a base layer 3. With this, the band gap of the base layer 3 can be made smaller than that of an emitter layer 4, which reduces the number of holes flowing from the base 3 into the emitter 4, whereby the common emitter current amplification factor hFE can be made large while maintaining the base resistance to be small.
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