| 摘要 |
PURPOSE:To enable working of lens shape with excellent reproducibility, by a method wherein, after a mesa without anisotropy is selectively formed on a semiconductor substrate and photo resist is spread thereon, the substrate is further subjected to dry etching. CONSTITUTION:After an N-type light transmitting layer 1 for light emitting element is spin-coated with positive resist 2, pre-baking is performed. After exposure via a mask 3 and development, a photo resist mask 4 is formed by post-baking. By using an etching liquid of H2SO4:H2O2:H2O=3:1:1, etching 5 without anisotropy is performed. After the photo resist for a mask is eliminated, photo resist is again spread on the whole surface. Then the resist is not spread on the shoulder part of a protruding mesa in the N-type light transmitting layer for light emitting element, and the photo resist on the protrusion turns to a lens shape 6. After baking, via the lens-shaped photo resist mask, reactive ion beam etching is performed by using Cl2 gas. Thus the upper part of the light emitting surface of light emitting element can be made up in a lens shape 7, so that the light emitting surface can be made up in a lens shape with excellent reproducibility. |
