发明名称 |
Deep diode devices and method and apparatus |
摘要 |
Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed.
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申请公布号 |
US4075038(A) |
申请公布日期 |
1978.02.21 |
申请号 |
US19750552154 |
申请日期 |
1975.02.24 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
ANTHONY, THOMAS R.;CLINE, HARVEY E. |
分类号 |
H01L21/18;H01L21/24;(IPC1-7):H01L29/04;H01L7/00 |
主分类号 |
H01L21/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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