| 摘要 |
<p>PURPOSE:To improve reliability, and effectively enable optical communication by eliminating a part of the region across which incident light of a semiconductor layer formed on the main surface of a light emitting element traverses. CONSTITUTION:The title device is provided with a photo detector 1 and a light emitting element 2 which is arranged on the photo receiving surface 1a side of the photo detector 1 and commonly possesses an optical axis l1 together with the photo detector 1. On the main surface of the light emitting element 2, a P-type semiconductor layer 4 is formed. The greater part A1 of the region of the P-type semiconductor layer 4, across which an incident light from an optical fiber 3 traverses is eliminated by etching and the like. As a result, the attenuation of the incident light due to the semiconductor layer 4 is prevented, and the sufficiently intensive light can be made to enter the light receiving surface 1a of the photo detector 1. Thereby, the light receiving sensitivity can be improved, and the efficiency of optical communication can be remarkably improved.</p> |
