| 摘要 |
1501483 Semi-conductor devices HITACHI Ltd 17 Oct 1975 [18 Oct 1974] 42777/75 Heading H1K An isolation region 12, which separates semiconductor layers 101 and 102 carried on a semi-conductor substrate 4 and a semi-conductor layer 5, comprises a polycrystalline insulating region 11 above a groove filled with oxide material 9. The region 11 may be formed by polycrystalline growth above the oxide region 9 during epitaxial growth of layers 101 and 102.
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