发明名称 FORMING METHOD FOR TRANSPARENT THIN FILM OF OXIDE
摘要 PURPOSE:To form the film of thickness above 500Angstrom without exposing the object to be evaporated to a high temperature and also without receiving the impact of electrons and ions, by holding the pressure of O2 in the vacuum tank within the specified range and evaporating Al, Mg, In or rare earth metals on the object to be evaporated while controlling the vaporization rate.
申请公布号 JPS5315273(A) 申请公布日期 1978.02.10
申请号 JP19760089665 申请日期 1976.07.29
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 SONODA TOMIYA;WASHIDA HIROSHI
分类号 C23C14/08;C23C14/00 主分类号 C23C14/08
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