| 发明名称 |
COMPLEMENTARY TYPE INSULATED GATE FIELD EFFECT TRANSISTOR CIRCUIT |
| 摘要 |
PURPOSE:Application of a gate breakdown voltage to gates hence breakdown of the gates are prevented by adding a surface field control gate to each of protecting diodes. |
| 申请公布号 |
JPS5315082(A) |
申请公布日期 |
1978.02.10 |
| 申请号 |
JP19760089930 |
申请日期 |
1976.07.27 |
| 申请人 |
MATSUSHITA ELECTRONICS CORP |
发明人 |
SATOU HISAHIRO;ARITA SHIGERU;FURUTA MASAO;KAYAHARA MASAO |
| 分类号 |
H03F1/52;H01L21/822;H01L21/8238;H01L27/02;H01L27/04;H01L27/092;H01L29/78;H02H7/20;H03F1/42 |
主分类号 |
H03F1/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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