| 摘要 |
In this method a cable, which comprises a conductor (1), an inner semiconducting layer (3), an insulating layer (4) and an outer semiconducting layer (5), is bevelled by means of a corresponding bevelling device in such a way that a piece of the conductor (1) is exposed, in order to be welded to a second cable end treated in the same way. Furthermore, during bevelling, the insulating layer (4) is tapered, the said layer being cut off just before it tapers away to the underlying semiconducting layer (3). In this, only the cut surface of the layer (3) is exposed. Following this, an expanding device in the form of a tapering sleeve (6) is pushed between the layer (3) and the conductor (1), whereupon these two are lifted apart and the layer (3) is opened out. Remaining in this position, the intermediate space between conductor and layer (3) is filled with a semiconducting polymeric material. After that, the damaged outer layers are restored by applying the corresponding materials and the necessary after-treatment operations, such as hardening, grinding etc. This avoids cutting partially into the semiconducting layer and its after-treatment. <IMAGE> |
