发明名称 Integrated circuit protection system - smooths out steps of different height with steep edges by application of solution which decomposes forming silica layer
摘要 <p>A large number of components is produced on a semiconductor chip (1) by diffusion, deposition and/or evaporation processes, with masking and etching. They form steps of different height with steeply falling edges. In order to even out the steps and to flatten the edges, an evening out cover layer (8) is applied on the structured semiconductor chip, so that the chip is covered with a solution which decomposes during centrifuging into a silica cover layer. The contours of the cover layer are sufficiently ently smooth to reduce the risk of mechanical damage to the component.</p>
申请公布号 DE2634095(A1) 申请公布日期 1978.02.02
申请号 DE19762634095 申请日期 1976.07.29
申请人 LICENTIA PATENT VERWALTUNGS-GMBH 发明人 KUISL,MAX,DR.
分类号 H01L21/312;H01L21/316;H01L21/56;H01L21/768;H01L23/31;(IPC1-7):01L21/56;01L21/82 主分类号 H01L21/312
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