发明名称 |
Multilayer metal contact on semiconductor chip - has three gold and further alloy layers on top |
摘要 |
A first contact layer is made of gold. The gold layer is applied directly on the semiconductor chip, and it is covered with a further gold layer containing a dissociation centres material which determines the conduction type of the chip. The chip may be of n - conduction type. This gold layer is covered with a third gold layer. A series of layers of titanium-palladium-silver or chromium-silver is applied on the gold layers. A layer of titanium 1000 A thick (11) may be applied to the final gold layer (7). A palladium layer may be applied on top of the titanium layer. |
申请公布号 |
DE2634263(A1) |
申请公布日期 |
1978.02.02 |
申请号 |
DE19762634263 |
申请日期 |
1976.07.30 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
CSILLAG,ANDREAS,DIPL.-PHYS.;LOECHER,DIETER;WEDERMANN,KLAUS |
分类号 |
H01L23/485 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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