发明名称 Multilayer metal contact on semiconductor chip - has three gold and further alloy layers on top
摘要 A first contact layer is made of gold. The gold layer is applied directly on the semiconductor chip, and it is covered with a further gold layer containing a dissociation centres material which determines the conduction type of the chip. The chip may be of n - conduction type. This gold layer is covered with a third gold layer. A series of layers of titanium-palladium-silver or chromium-silver is applied on the gold layers. A layer of titanium 1000 A thick (11) may be applied to the final gold layer (7). A palladium layer may be applied on top of the titanium layer.
申请公布号 DE2634263(A1) 申请公布日期 1978.02.02
申请号 DE19762634263 申请日期 1976.07.30
申请人 LICENTIA PATENT-VERWALTUNGS-GMBH 发明人 CSILLAG,ANDREAS,DIPL.-PHYS.;LOECHER,DIETER;WEDERMANN,KLAUS
分类号 H01L23/485 主分类号 H01L23/485
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